High-Entropy Liquid Metal Process for Transparent Ultrathin p-Type Gallium Oxide

Abstract

The naturally self-limiting oxide formed on the surface of liquid metals can be exfoliated and transferred onto various substrates. This oxide layer with a thickness of a few nanometers is typically highly transparent and can be engineered for applications in large-area optoelectronics. While the incorporation of solvated elements into the interfacial oxide of post-transition metal-based liquid metals is demonstrated for n-doping, achieving p-doping in such ultrathin oxide layers remains a significant challenge. In this study, the use of dissolved indium (In), platinum (Pt), gold (Au), palladium (Pd), and copper (Cu) in gallium (Ga)-based alloys is investigated to create a high-entropy liqui..